1SS361FV Datasheet (Toshiba) - Silicon Epitaxial Planar Type Diode

1SS361FV, Silicon Epitaxial Planar Type Diode

0.5± 0.

1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications AEC-Q101 qualified (Note 1) Small package Excellent in forward current and forward voltage characteristics : VF (3) = 0.9 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales.

1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 1SS361FV Unit: mm 1.2±0.05 0.8±0.05