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1SS360 Datasheet - Toshiba Semiconductor

1SS360 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 1SS360 Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.) Note1: For detail information, please contact our sales. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 .

1SS360 Datasheet (555.65 KB)

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Datasheet Details

Part number:

1SS360

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

555.65 KB

Description:

Silicon epitaxial planar type diode.

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1SS360 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

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