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1SS362FV - Silicon Epitaxial Planar Type Diode

1SS362FV Description

0.5± 0.1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications * AEC-Q101 qualified (Note 1) * Smal.

1SS362FV Applications

* AEC-Q101 qualified (Note 1)
* Small package
* Excellent in forward current and forward voltage characteristics: VF (3) = 0.97 V (typ. )
* Fast reverse recovery time: trr = 1.6 ns (typ. )
* Small total capacitance: CT = 0.9 pF (typ. ) Note1: For detail information, please c

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Datasheet Details

Part number
1SS362FV
Manufacturer
Toshiba ↗
File Size
434.15 KB
Datasheet
1SS362FV-Toshiba.pdf
Description
Silicon Epitaxial Planar Type Diode

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Silicon Epitaxial Planar Type Diode Toshiba
Toshiba 1SS362FV-like datasheet

1SS362FV Stock/Price