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1SS362FV Datasheet - Toshiba

1SS362FV Silicon Epitaxial Planar Type Diode

0.5± 0. 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications AEC-Q101 qualified (Note 1) Small package Excellent in forward current and forward voltage characteristics: VF (3) = 0.97 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 1SS362FV Unit: mm 1.2±0.05 0.8±0.05 0.

1SS362FV Datasheet (434.15 KB)

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Datasheet Details

Part number:

1SS362FV

Manufacturer:

Toshiba ↗

File Size:

434.15 KB

Description:

Silicon epitaxial planar type diode.

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1SS362FV Silicon Epitaxial Planar Type Diode Toshiba

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