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0.5± 0. 1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362FV
Ultra-High-Speed Switching Applications
AEC-Q101 qualified (Note 1)
Small package
Excellent in forward current and forward voltage
characteristics:
VF (3) = 0.97 V (typ.)
Fast reverse recovery time: trr = 1.6 ns (typ.)
Small total capacitance: CT = 0.9 pF (typ.)
Note1: For detail information, please contact our sales.
1.2±0.05 0.8±0.05 0.4 0.4
0.22±0.05
1SS362FV
Unit: mm
1.2±0.05 0.8±0.05
0.32±0.05
1
2
3
0.13±0.05
0.5±0.
1SS362FV Datasheet
