1SS362FV Datasheet (Toshiba) - Silicon Epitaxial Planar Type Diode

1SS362FV, Silicon Epitaxial Planar Type Diode

0.5± 0.

1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications AEC-Q101 qualified (Note 1) Small package Excellent in forward current and forward voltage characteristics: VF (3) = 0.97 V (typ.) Fast reverse recovery time: trr = 1.6 ns (typ.) Small total capacitance: CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales.

1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 1SS362FV Unit: mm 1.2±0.05 0.8±0.05 0