1SS360
1SS360 is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
- AEC-Q101 Qualified (Note1)
- Small package
- Low forward voltage
: VF (3) = 0.92 V (typ.)
- Fast reverse recovery time : trr = 1.6 ns (typ.)
- Small total capacitance : CT = 2.2 p F (typ.)
Note1: For detail information, please contact our sales.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
Surge current (10ms)
IFSM
2-
Power dissipation
PD (Note 2, 4)
120 m W
PD (Note 3)
Junction temperature
Tj (Note 2)
°C
Tj (Note...
