1SS360F
1SS360F is Silicon Epitaxial Planar Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
Unit in mm l Small package
: 1608 Flat lead l Excellent in forward current and forward voltage characteristics
: VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2p F (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
85 80 300 (- ) 100 (- ) 2 (- ) 100
Junction temperature
Tj 125
Storage temperature range
Tstg
- 55~125
(- ) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
V m A m A
A m W
°C
°C JEDEC
―
EIAJ TOSHIBA
― 1-2SA1A
Weigh: 2.3 mg
Characteristic
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
VF (1) VF (2) VF (3) IR (1) IR (2)
CT trr
Test Circuit
Test Condition
― IF = 1m A
― IF = 10m A
― IF = 100m...
