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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360F
Ultra High Speed Switching Applications
1SS360F
Unit in mm
l Small package
: 1608 Flat lead
l Excellent in forward current and forward voltage
characteristics
: VF (3) = 0.92V (typ.)
l Fast reverse recovery time : trr = 1.6ns (typ.)
l Small total capacitance : CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
85 80 300 (*) 100 (*) 2 (*) 100
Junction temperature
Tj 125
Storage temperature range
Tstg −55~125
(*) Unit rating. Total rating = unit rating × 1.
1SS360F Datasheet
