1SS367
1SS367 is Silicon Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5m...
1SS367 Datasheets by Manufacturer
| Manufacturer | Part Number | Description |
|---|---|---|
SEMTECH |
1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
EIC Semiconductor |
1SS367 | 15V 100mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
Kexin Semiconductor |
1SS367 | HIGH SPEED SWITCHING DIODE |