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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS367
High Speed Switching Application
1SS367
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM 200 mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM P*
100 mA 1A
200 mW
Junction temperature
Tj 125 °C
Storage temperature
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS367 Datasheet
