1SS367 Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.
1SS367 datasheet PDF by Toshiba.
| Part number | 1SS367 |
|---|---|
| Datasheet | 1SS367_ToshibaSemiconductor.pdf |
| File Size | 212.30 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
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1SS367 | 15V 100mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | EIC |
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1SS367 | HIGH SPEED SWITCHING DIODE | Kexin |
| Part Number | Description |
|---|---|
| 1SS360 | Silicon Epitaxial Planar Type Diode |
| 1SS360F | Silicon Epitaxial Planar Type Diode |
| 1SS361 | Silicon Epitaxial Planar Type Diode |
| 1SS362 | Silicon Epitaxial Planar Type Diode |
| 1SS364 | Silicon Epitaxial Planar Type Diode |
| 1SS368 | Silicon Epitaxial Planar Type Diode |
| 1SS369 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |