Datasheet Details
| Part number | 1SS367 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 212.30 KB |
| Description | Silicon Diode |
| Datasheet | 1SS367_ToshibaSemiconductor.pdf |
|
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Overview: TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.
| Part number | 1SS367 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 212.30 KB |
| Description | Silicon Diode |
| Datasheet | 1SS367_ToshibaSemiconductor.pdf |
|
|
|
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS367 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE | SEMTECH |
| Part Number | Description |
|---|---|
| 1SS360 | Silicon Epitaxial Planar Type Diode |
| 1SS360F | Diode |
| 1SS361 | Silicon Epitaxial Planar Type Diode |
| 1SS362 | Silicon Epitaxial Planar Type Diode |
| 1SS364 | Diode |
| 1SS368 | Diode |
| 1SS369 | Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Diode |