1SS367 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.
| Part number | 1SS367 |
|---|---|
| Download | 1SS367 Datasheet (PDF) |
| File Size | 212.30 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
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| Manufacturer | Part Number | Description |
|---|---|---|
SEMTECH |
1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
EIC Semiconductor |
1SS367 | 15V 100mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
Kexin Semiconductor |
1SS367 | HIGH SPEED SWITCHING DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.