1SS367 Description
100 mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE SOD-323 1.80 1.60 0.25 0.40 1.15 1.35 0.15 (max).
1SS367 Key Features
- Low forward voltage
- High speed switching
- Pb / RoHS Free
- Case : SOD-323 plastic Case
- Weight : approx. 0.004 g
- Part: 1SS367
- Manufacturer: EIC Semiconductor
- Size: 134.69 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
1SS367 | Silicon Diode |
SEMTECH |
1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
Kexin Semiconductor |
1SS367 | HIGH SPEED SWITCHING DIODE |