| Part number | 1SS367 |
|---|---|
| Datasheet | 1SS367-EIC.pdf |
| File Size | 134.69 KB |
| Manufacturer | EIC Semiconductor |
| Description | 15V 100mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
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100 mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE SOD-323 1.80 1.60 0.25 0.40 1.15 1.35 0.15 (max).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS367 | Silicon Diode | Toshiba Semiconductor |
 |
1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH |
 |
1SS367 | HIGH SPEED SWITCHING DIODE | Kexin |
See all EIC Semiconductor datasheets
| Part Number | Description |
|---|---|
| 1SS352 | SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE |
| 1SS355 | SILICON EPITAXIAL HIGH SPEED SWITCHING DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRER DIODE |
| 1SS106 | SCHOTTKY BARRIER DIODES |
| 1SS108 | SCHOTTKY BARRIER DIODES |
| 1SS120 | HIGH SPEED SWITCHING DIODE |
| 1SS130 | HIGH SPEED SWITCHING DIODE |
| 1SS131 | HIGH SPEED SWITCHING DIODE |
| 1SS132 | HIGH SPEED SWITCHING DIODE |
| 1SS133 | HIGH SPEED SWITCHING DIODE |
