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1SS367 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

General Description

Absolute Maximum Ratings (T j = 25?

Key Features

  • PIN.
  • Low forward voltage: VF = 0.23V (typ. ) @IF = 5mA 1 2 1.

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Datasheet Details

Part number 1SS367
Manufacturer SEMTECH
File Size 230.82 KB
Description SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
Datasheet download datasheet 1SS367 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features PIN • Low forward voltage: VF = 0.23V (typ.