Datasheet Details
| Part number | 1SS367 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 230.82 KB |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| Datasheet | 1SS367-SEMTECH.pdf |
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Overview: 1SS367 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Applicatio.
| Part number | 1SS367 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 230.82 KB |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| Datasheet | 1SS367-SEMTECH.pdf |
|
|
|
Cathode Anode 2 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25?
) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 200 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ?
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS367 | Silicon Diode | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |