1SS367 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

Product Overview

SEMTECH

Datasheet Details

Part number	1SS367
Manufacturer	SEMTECH
File Size	230.82 KB
Description	SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
Datasheet	1SS367 Datasheet
Additional preview pages of the 1SS367 datasheet.

Product details

Description

Cathode Anode 2 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 200 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ? ? ? Characteristics at T j

Features

PIN.
Low forward voltage: VF = 0.23V (typ. ) @IF = 5mA 1 2 1.

📁 Similar Datasheet

1SS360 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS360F - Diode (Toshiba Semiconductor)
1SS361 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS361CT - Silicon Epitaxial Planar Type Diode (Toshiba)
1SS361FV - Silicon Epitaxial Planar Type Diode (Toshiba)
1SS361LP3 - ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE (Diodes)
1SS361LPH4 - SURFACE MOUNT SWITCHING DIODE (Diodes)
1SS361UDJ - DUAL SURFACE MOUNT SWITCHING DIODE (Diodes)

Other Datasheets by SEMTECH

1SS368 - SILICON EPITAXIAL PLANAR DIODE
1SS369 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
1SS314 - SILICON EPITAXIAL PLANAR DIODE
1SS352 - Silicon Epitaxial Planar Switching Diode
1SS355 - SILICON EPITAXIAL PLANAR SWITCHING DIODES
1SS373 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

Published: Feb 13, 2018 |