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1SS367 Datasheet - Toshiba Semiconductor

1SS367 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 200 mW Junction temperature Tj 125 °C .

1SS367 Datasheet (212.30 KB)

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Datasheet Details

Part number:

1SS367

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

212.30 KB

Description:

Silicon diode.

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1SS367 Silicon Diode Toshiba Semiconductor

1SS367 Distributor