Datasheet Specifications
- Part number
- 1SS367
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 212.30 KB
- Datasheet
- 1SS367_ToshibaSemiconductor.pdf
- Description
- Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage:.
Applications
* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel1SS367 Distributors
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