Datasheet Details
Part number:
1SS367
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
212.30 KB
Description:
Silicon diode.
1SS367_ToshibaSemiconductor.pdf
1SS367_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
1SS367
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
212.30 KB
Description:
Silicon diode.
1SS367, Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application 1SS367 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 200 mW Junction temperature Tj 125 °C
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