1SS367
Toshiba ↗ Semiconductor
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Silicon diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS367
High Speed Switching Application
1SS367
Unit: mm
z Small package z Low forward voltage:.
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360
1SS360
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
L.
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS360F
Ultra High Speed Switching Applications
1SS360F
Unit in mm
l Small package
: 1608 Flat lead
l .
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Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
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1SS361CT
Ultra High Speed Switching Application
z Small package
z Low forward voltage:
VF (3) = 0.9 V (.
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0.5± 0. 1
TOSHIBA Diode Silicon Epitaxial Planar Type
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Ultra-High-Speed Switching Applications
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Small packag.
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(Diodes)
ADVANCE INFORMATION
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