Datasheet4U Logo Datasheet4U.com

1SS362 Datasheet - Toshiba Semiconductor

1SS362 Silicon Epitaxial Planar Type Diode

1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF(3) = 0.97 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 240 mA Average f.

1SS362 Datasheet (545.50 KB)

Preview of 1SS362 PDF

Datasheet Details

Part number:

1SS362

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

545.50 KB

Description:

Silicon epitaxial planar type diode.

📁 Related Datasheet

1SS360 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

1SS360F Diode (Toshiba Semiconductor)

1SS361 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

1SS361CT Silicon Epitaxial Planar Type Diode (Toshiba)

1SS361FV Silicon Epitaxial Planar Type Diode (Toshiba)

1SS361LP3 ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE (Diodes)

1SS361LPH4 SURFACE MOUNT SWITCHING DIODE (Diodes)

1SS361UDJ DUAL SURFACE MOUNT SWITCHING DIODE (Diodes)

1SS362FV Silicon Epitaxial Planar Type Diode (Toshiba)

1SS364 Diode (Toshiba Semiconductor)

TAGS

1SS362 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

Image Gallery

1SS362 Datasheet Preview Page 2 1SS362 Datasheet Preview Page 3

1SS362 Distributor