1SS361CT Datasheet (Toshiba) - Silicon Epitaxial Planar Type Diode

1SS361CT, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361CT Ultra High Speed Switching Application z Small package z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 pF (typ.) 1SS361CT Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO