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1SS361CT Datasheet - Toshiba

1SS361CT Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361CT Ultra High Speed Switching Application z Small package z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 0.9 pF (typ.) 1SS361CT Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO .

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Datasheet Details

Part number:

1SS361CT

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File Size:

237.05 KB

Description:

Silicon epitaxial planar type diode.

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1SS361CT 1SS361CT Silicon Epitaxial Planar Type Diode Toshiba

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