1SS302A Datasheet, Diodes, Toshiba

1SS302A Features

  • Diodes (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS

PDF File Details

Part number:

1SS302A

Manufacturer:

Toshiba ↗

File Size:

186.97kb

Download:

📄 Datasheet

Description:

Silicon epitaxial planar switching diodes.

Datasheet Preview: 1SS302A 📥 Download PDF (186.97kb)
Page 2 of 1SS302A Page 3 of 1SS302A

1SS302A Application

  • Applications
  • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) N

TAGS

1SS302A
Silicon
Epitaxial
Planar
Switching
Diodes
Toshiba

📁 Related Datasheet

1SS302 - Diode (Toshiba Semiconductor)
.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward .

1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)
.DataSheet.co.kr SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS302 Features Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse re.

1SS300 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Application 1SS300 Unit: mm  AEC-Q101 Qualified (Note1)  Small pack.

1SS300 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300 Features Small package Low forward voltage :VF(3) = 0.92 V(Typ) Fast reverse rec.

1SS301 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm  AEC-Q101 Qualified (Note1)  Small pack.

1SS301 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpo.

1SS301 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)
SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301 Features Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1..

1SS306 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  Low forward voltage : VF (2) =.

1SS307 - Diode (Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Sma.

1SS307E - Diode (Toshiba)
Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA .

Stock and price

part
Toshiba America Electronic Components
DIODE ARRAY GP 80V 100MA SC-70
DigiKey
1SS302A,LF
1 In Stock
Qty : 1000 units
Unit Price : $0.05
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts