TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications Low forward voltage Low reverse current Small total capacitance Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V Maximum (peak) forward current IFM 300 mA Average forward c
1SS307_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
1SS307
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
537.41 KB
Description:
Diode.