1SS307 Diode

Toshiba Semiconductor

Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications * Low forward voltage * Low reverse curre.

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Datasheet Specifications

Part number: 1SS307
Manufacturer: Toshiba ↗ Semiconductor
File Size: 537.41 KB
Datasheet: 1SS307_ToshibaSemiconductor.pdf
Description: Diode

Applications

* Low forward voltage
* Low reverse current
* Small total capacitance
* Small package : VF = 1.0 V (typ. ) : IR = 10 nA (max) : CT = 3.0 pF (typ. ) : SC
* 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Re

1SS307 Distributors

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1SS307 Diode Toshiba Semiconductor

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