Datasheet4U Logo Datasheet4U.com

1SS307 Datasheet - Toshiba Semiconductor

1SS307 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications Low forward voltage Low reverse current Small total capacitance Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V Maximum (peak) forward current IFM 300 mA Average forward c.

1SS307 Datasheet (537.41 KB)

Preview of 1SS307 PDF
1SS307 Datasheet Preview Page 2 1SS307 Datasheet Preview Page 3

Datasheet Details

Part number:

1SS307

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

537.41 KB

Description:

Diode.

📁 Related Datasheet

1SS300 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)

1SS301 Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)

1SS301 SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)

1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES (Kexin)

1SS302 Diode (Toshiba Semiconductor)

1SS302 ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)

1SS302A Silicon Epitaxial Planar Switching Diodes (Toshiba)

TAGS

1SS307 Diode Toshiba Semiconductor

1SS307 Distributor