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1SS307 Datasheet - Toshiba Semiconductor

1SS307 Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications Low forward voltage Low reverse current Small total capacitance Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V Maximum (peak) forward current IFM 300 mA Average forward c.

1SS307_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS307

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

537.41 KB

Description:

Diode.

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1SS307 1SS307 Diode Toshiba Semiconductor

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