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1SS302 Datasheet - Toshiba Semiconductor

1SS302 Diode

www.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.90V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction t.

1SS302_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS302

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

270.77 KB

Description:

Diode.

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1SS302 1SS302 Diode Toshiba Semiconductor

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