1SS302 - Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS302
Manufacturer	Toshiba Semiconductor
File Size	270.77 KB
Description	Diode
Datasheet	1SS302 Datasheet
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www.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.90V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 (*) 100 (*) 2 (*) 100 125 −55~125 Unit V V mA mA A mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.006g ― SC-70 1-2P1C Note: Using continuously under heavy loads (e.g.

Published: Mar 23, 2005 |