1SS307E - Diode

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Toshiba

Part number	1SS307E
Manufacturer	Toshiba
File Size	136.21 KB
Description	Diode
Datasheet	1SS307E Datasheet
Additional preview pages of the 1SS307E datasheet.

(1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse v.

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Published: Sep 18, 2016 |