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1SS307E - Diode

Datasheet Summary

Features

  • (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse v.

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Datasheet Details

Part number 1SS307E
Manufacturer Toshiba
File Size 136.21 KB
Description Diode
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Full PDF Text Transcription

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Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4.
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