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1SS307E - Diode

1SS307E Description

Switching Diodes Silicon Epitaxial Planar 1SS307E 1.Applications * General-Purpose Rectifiers 2..

1SS307E Features

* (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production

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Toshiba 1SS307E-like datasheet