1SS311 - Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS311
Manufacturer	Toshiba Semiconductor
File Size	174.83 KB
Description	Diode
Datasheet	1SS311 Datasheet
Additional preview pages of the 1SS311 datasheet.

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.) z High voltage : VR = 400V (min) z Fast reverse recovery time : trr = 1.5ns (typ.) z Small total capacitance : CT = 3.2pF (typ.) z Small package : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 420 V 400 V 300 mA 100 mA 2A 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55∼125 °C JEDEC JEITA ― SC−61 Note: Using continuously under heavy loads (e.g.

Published: Mar 23, 2005 |