Datasheet Specifications
- Part number
- 1SS315
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 143.64 KB
- Datasheet
- 1SS315_ToshibaSemiconductor.pdf
- Description
- Silicon Epitaxial Planar Type Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Chara.
Applications
* 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C1SS315 Distributors
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