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1SS315 Datasheet - Toshiba Semiconductor

1SS315 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C 55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may caus.

1SS315_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS315

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

143.64 KB

Description:

Silicon epitaxial planar type diode.

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1SS315 1SS315 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

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