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1SS314 - Silicon Epitaxial Planar Type Diode

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Part number 1SS314
Manufacturer Toshiba Semiconductor
File Size 147.61 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet 1SS314 Datasheet
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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 1SS314 VHF Tuner Band Switch Applications • Small package. • Small total capacitance: CT = 1.2 pF (max) • Low series resistance: rs = 0.5 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
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