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1SS319 Datasheet - Toshiba Semiconductor

1SS319 Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Small package: SC-61 Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max) 1SS319 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA 1. CATHODE 1 2. CATHODE 2.

1SS319_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS319

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

603.41 KB

Description:

Silicon epitaxial schottky barrier type diode.

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1SS319 1SS319 Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor

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