Part number:
1SS319
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
603.41 KB
Description:
Silicon epitaxial schottky barrier type diode.
1SS319_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
1SS319
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
603.41 KB
Description:
Silicon epitaxial schottky barrier type diode.
1SS319, Silicon Epitaxial Schottky Barrier Type Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Small package: SC-61 Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (max) 1SS319 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA 1.
CATHODE 1 2.
CATHODE 2
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