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1SS345

Sillicon Epitaxial Schottky Barrier Diode

1SS345 Features

* Small interterminal capacitance (C=0.45pF typ).

* Low forward voltage and excellent detection efficiency (VF=0.35V max)

* High breakdown voltage (VR=55V).

* Very small-sized package permitting the 1SS345applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS3

1SS345 Datasheet (62.01 KB)

Preview of 1SS345 PDF

Datasheet Details

Part number:

1SS345

Manufacturer:

Sanyo Semicon Device

File Size:

62.01 KB

Description:

Sillicon epitaxial schottky barrier diode.

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1SS345 Sillicon Epitaxial Schottky Barrier Diode Sanyo Semicon Device

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