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1SS345 - Sillicon Epitaxial Schottky Barrier Diode

Datasheet Summary

Features

  • Small interterminal capacitance (C=0.45pF typ).
  • Low forward voltage and excellent detection efficiency (VF=0.35V max).
  • High breakdown voltage (VR=55V).
  • Very small-sized package permitting the 1SS345applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS345] 1:Anode 2:No connection 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperatu.

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Datasheet Details

Part number 1SS345
Manufacturer Sanyo Semicon Device
File Size 62.01 KB
Description Sillicon Epitaxial Schottky Barrier Diode
Datasheet download datasheet 1SS345 Datasheet
Additional preview pages of the 1SS345 datasheet.

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Full PDF Text Transcription

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Ordering number :EN3157B 1SS345 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitance (C=0.45pF typ). · Low forward voltage and excellent detection efficiency (VF=0.35V max) · High breakdown voltage (VR=55V). · Very small-sized package permitting the 1SS345applied sets to be made small and slim.
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