1SS345 Datasheet - Sanyo Semicon Device

1SS345 Sillicon Epitaxial Schottky Barrier Diode

1SS345 Features

* Small interterminal capacitance (C=0.45pF typ).

* Low forward voltage and excellent detection efficiency (VF=0.35V max)

* High breakdown voltage (VR=55V).

* Very small-sized package permitting the 1SS345applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS3

Datasheet Details

1SS345

Sanyo Semicon Device

62.01 KB

Sillicon epitaxial schottky barrier diode.

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TAGS

1SS345 Distributor