1SS348 Datasheet - Toshiba Semiconductor

1SS348 Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.56V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current Power dissipation IO 100 mA P 200 mW Junction temperature Sto.

1SS348_ToshibaSemiconductor.pdf