1SS350 - Sillicon Epitaxial Schottky Barrier Diode

Product Overview

Sanyo Semicon Device

Part number	1SS350
Manufacturer	Sanyo Semicon Device
File Size	57.26 KB
Description	Sillicon Epitaxial Schottky Barrier Diode
Datasheet	1SS350 Datasheet
Additional preview pages of the 1SS350 datasheet.

Small interterminal capacitance (C=0.69pF typ).
Low forward voltage (VF=0.23V max).
Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Symbol VRM IF Tj Tstg Conditions Ratings 5 30 125.
55 to +125 Unit V mA ˚C ˚C.

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Published: Mar 23, 2005 |