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1SS350

Sillicon Epitaxial Schottky Barrier Diode

1SS350 Features

* Small interterminal capacitance (C=0.69pF typ).

* Low forward voltage (VF=0.23V max).

* Very small-sized package permitting the 1SS350applied sets to be made small and slim. Package Dimensions unit:mm 1148A [1SS350] 1:Anode 2:No contact 3:Cathode SANYO:CP Specifications Absolute Max

1SS350 Datasheet (57.26 KB)

Preview of 1SS350 PDF

Datasheet Details

Part number:

1SS350

Manufacturer:

Sanyo Semicon Device

File Size:

57.26 KB

Description:

Sillicon epitaxial schottky barrier diode.

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1SS350 Sillicon Epitaxial Schottky Barrier Diode Sanyo Semicon Device

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