Part number:
1SS349
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
193.56 KB
Description:
Silicon diode.
1SS349_ToshibaSemiconductor.pdf
Datasheet Details
1SS349_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
1SS349
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
193.56 KB
Description:
Silicon diode.
1SS349, Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Small package : VF (3) = 0.49V (typ.) : IR = 50μA (max) : SC 59 1SS349 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 3000 mA Average forward current Power dissipation IO 1000 mA P 200 mW Junc
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