1SS349 Datasheet - Toshiba Semiconductor

1SS349 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Small package : VF (3) = 0.49V (typ.) : IR = 50μA (max) : SC 59 1SS349 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 3000 mA Average forward current Power dissipation IO 1000 mA P 200 mW Junc.

1SS349_ToshibaSemiconductor.pdf