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1SS349 Datasheet - Toshiba Semiconductor

1SS349 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Small package : VF (3) = 0.49V (typ.) : IR = 50μA (max) : SC 59 1SS349 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 3000 mA Average forward current Power dissipation IO 1000 mA P 200 mW Junc.

1SS349 Datasheet (193.56 KB)

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Datasheet Details

Part number:

1SS349

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

193.56 KB

Description:

Silicon diode.

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TAGS

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