1SS306
Toshiba ↗ Semiconductor
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Silicon epitaxial planar type diode.
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1SS300 - Silicon Epitaxial Planar Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS300
Ultra High Speed Switching Application
1SS300
Unit: mm
AEC-Q101 Qualified (Note1)
Small pack.
1SS300 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES
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ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300
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Small package
Low forward voltage
:VF(3) = 0.92 V(Typ)
Fast reverse rec.
1SS301 - Silicon Epitaxial Planar Type Diode
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS301
Ultra High Speed Switching Application
1SS301
Unit: mm
AEC-Q101 Qualified (Note1)
Small pack.
1SS301 - SUPER HIGH SPEED SWITCHING DIODE
(XIN SEMICONDUCTOR)
XIN SEMICONDUCTOR
ISO9002
1SS101 THUR 1SS301
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY
FEATURES
For general purpo.
1SS301 - ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES
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SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301
Features
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1..
1SS302 - Diode
(Toshiba Semiconductor)
.DataSheet.co.kr
1SS302
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS302
Ultra High Speed Switching Applications
z Small package z Low forward .
1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS
(Guangdong Kexin Industrial)
.DataSheet.co.kr
SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS302
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Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse re.
1SS302A - Silicon Epitaxial Planar Switching Diodes
(Toshiba)
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1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 qualified (Note 1) (2) Fast re.
1SS307 - Diode
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TOSHIBA Diode Silicon Epitaxial Planar Type
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1SS307
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Low forward voltage Low reverse current Sma.
1SS307E - Diode
(Toshiba)
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1SS307E
1. Applications
• General-Purpose Rectifiers
2. Features
(1) Very low reverse current. : IR = 10 nA .