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1SS306 Datasheet - Toshiba Semiconductor

1SS306 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF (2) = 0.90 V (typ.) Fast reverse recovery time : trr = 30 ns (typ.) Small total capacitance : CT = 1.5 pF (typ.) 1SS306 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 mA .

1SS306_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SS306

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

829.17 KB

Description:

Silicon epitaxial planar type diode.

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1SS306 1SS306 Silicon Epitaxial Planar Type Diode Toshiba Semiconductor

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