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1SS306 - Silicon Epitaxial Planar Type Diode

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Part number 1SS306
Manufacturer Toshiba Semiconductor
File Size 829.17 KB
Description Silicon Epitaxial Planar Type Diode
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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  Low forward voltage : VF (2) = 0.90 V (typ.)  Fast reverse recovery time : trr = 30 ns (typ.)  Small total capacitance : CT = 1.5 pF (typ.) 1SS306 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 4.
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