1SS308 Datasheet - Toshiba Semiconductor

1SS308, Silicon Epitaxial Planar Type Diode

1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching

Applications

* Unit: mm
* Small package : SC-74A
* Low forward voltage : VF (3) = 0.92 V (typ. )
* Fast reverse recovery time : trr = 1.6 ns (typ. )
* Small total capacitance : CT = 2.2 pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) revers

1SS308_ToshibaSemiconductor.pdf