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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS311
1SS311
High Voltage,High Speed Switching Applications
z Low forward voltage
: VF = 0.94V (typ.)
z High voltage
: VR = 400V (min)
z Fast reverse recovery time : trr = 1.5ns (typ.)
z Small total capacitance : CT = 3.2pF (typ.)
z Small package
: SC−59
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
420 V 400 V 300 mA 100 mA
2A 150 mW
Junction temperature
Tj 125 °C
Storage temperature
Tstg
−55∼125
°C JEDEC
JEITA
― SC−61
Note: Using continuously under heavy loads (e.g.
1SS311 Datasheet
