1SS311 Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.) z High voltage : VR = 400V (min) z Fast reverse recovery time : trr = 1.5ns (typ.) z Small total capacitance : CT = 3.2p F (typ.) z Small package : SC- 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 420 V 400 V 300 m A 100 m A 2A 150 m W Junction temperature Tj 125 °C Storage temperature Tstg - 55∼125 °C JEDEC JEITA ― SC- 61 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1- 3G1B Weight: 0.012g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR (1) IR (2) Test Circuit Test Condition ― IF = 10m A ― IF = 100m A ― VR = 300V ― VR = 400V ― VR = 0, f =...