1SS319 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	1SS319
Manufacturer	Toshiba
File Size	603.41 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS319 Datasheet

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching  Small package: SC-61  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse current: IR = 5μA (max) 1SS319 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA 1. CATHODE 1 2. CATHODE 2 Power dissipation P 150 * mW 3. ANODE 2 Junction temperature Tj 125 °C 4. ANODE 1 SMQ Storage temperature Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy loads (e.g.