1SS319
1SS319 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching
- Small package: SC-61
- Low forward voltage: VF (3) = 0.54V (typ.)
- Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
- m A
Average forward current
- m A
1. CATHODE 1
2. CATHODE 2
Power dissipation
- m W
3. ANODE 2
Junction temperature
Tj
°C
4. ANODE 1
Storage temperature
Tstg
- 55 to 125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of...
