1SS315 datasheet by Toshiba.
| Part number | 1SS315 |
|---|---|
| Datasheet | 1SS315_ToshibaSemiconductor.pdf |
| File Size | 143.64 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications 1SS315 Unit: mm Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range VRM IF Tj Tstg 5 V 30 mA 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| 1SS311 | Diode |
| 1SS312 | Silicon Epitaxial Planar Type Diode |
| 1SS313 | Silicon Epitaxial Planar Type Diode |
| 1SS314 | Silicon Epitaxial Planar Type Diode |
| 1SS319 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |
| 1SS306 | Silicon Epitaxial Planar Type Diode |
| 1SS307 | Silicon Epitaxial Planar Type Diode |
