1SS389-G Datasheet | Specifications & PDF Download

1SS389 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application Features • Low forward voltage: VF = 0.23V (typ.) @IF=5mA PINNING

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1SS389 Schottky Barrier Diode SOD-523 Features — Low forward voltage. — Small package. Applications — Schottky diode in surface mounted circuits. O

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage:

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Small Signal Schottky Diodes 1SS389-G Reverse Voltage: 10 V Forward Current: 100 mA RoHS Device Features - High speed switching. - Small surface mount

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS389 SCHOTTKY BARRIER DIODE FEATURES  High Speed  High Re

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SMD Type Diodes HIGH SPEED SWITCHING APPLICATION 1SS389 Features Small Package Low Forward Voltage VF = 0.23V(TYP.) @IF = 5 mA +0.050.8 -0.05 SOD

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Schottky Barrier Diode FEATURES  Low forward voltage.  Small package. Pb Lead-free Production specification 1SS389 APPLICATIONS  High speed swit

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® WON-TOP ELECTRONICS 1SS389 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Turn-On Voltage  Fast Switching Speed  PN Junction Guard Ring

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