Datasheet Details
Part number:
1SS389
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
199.93 KB
Description:
Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse volta