1SS389 Datasheet - Toshiba Semiconductor

1SS389 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 V 10 V 200 mA 100 mA 1A 150 mW Junction temperature Tj 125 °C Storage.

1SS389_ToshibaSemiconductor.pdf