1SS417 Datasheet | Specifications & PDF Download

Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS417 1: Cathod

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1SS417TM HIGH SPEED SWITCHING APPLICATION FEATURES • Small package • Low forward voltage : VF(3)=0.56V(typ.) • Low reverse current : I R=5µA (Max.) •

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P1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Voltage 40 V Current 100 mA Features  Small package  Low forward voltage : VF(3)=0.51V(typ.)  Low r

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03

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