Toshiba
1SS418 - Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS418
High Speed Switching Application
• Low forward voltage
: VF (3) = 0.23V (typ.)@ IF = 5m
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier T.
Toshiba
1SS418 Distributor
