1SS418 Datasheet - Toshiba

1SS418 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V sESC Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 100 mW Junction temperatur.

1SS418-Toshiba.pdf