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1SS418 Datasheet - Toshiba

1SS418-Toshiba.pdf

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Datasheet Details

Part number:

1SS418

Manufacturer:

Toshiba ↗

File Size:

138.70 KB

Description:

Silicon diode.

1SS418, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V sESC Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 mA 1A 100 mW Junction temperatur

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