Datasheet Specifications
- Part number
- 1SS417CT
- Manufacturer
- Toshiba ↗
- File Size
- 189.50 KB
- Datasheet
- 1SS417CT-Toshiba.pdf
- Description
- Silicon Epitaxial Schottky Barrier Type Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 .
Applications
* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel1SS417CT Distributors
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