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1SS417CT - Silicon Epitaxial Schottky Barrier Type Diode

1SS417CT Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 .

1SS417CT Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Datasheet Details

Part number
1SS417CT
Manufacturer
Toshiba ↗
File Size
189.50 KB
Datasheet
1SS417CT-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba 1SS417CT-like datasheet