Datasheet Details
Part number:
1SS417CT
Manufacturer:
File Size:
189.50 KB
Description:
Silicon Epitaxial Schottky Barrier Type Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 * Small package * Low forward voltage: VF (3) = 0.56 V (typ.) * Low reverse current: IR = 5 μA (max)