1SS416 Datasheet - Toshiba

1SS416 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial 1SS416 1. Applications High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS416 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2003-06 1 2014-07-08 Rev.3.0 1SS416 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 35 V Reverse voltage VR 30 Peak forward current IFM 200 mA Average rectified curre.

1SS416-Toshiba.pdf