Datasheet4U Logo Datasheet4U.com

1SS413CT - Schottky Barrier Diode

1SS413CT Description

Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1.Applications * High-Speed Switching 2..

1SS413CT Features

* (1) Low forward voltage : VF(3) = 0.50 V (typ. ) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ. ) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris

📥 Download Datasheet

Preview of 1SS413CT PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 1SS413 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE (SEMTECH)
  • 1SS41 - Switching Diode (Rohm)
  • 1SS417FN2 - SURFACE MOUNT SCHOTTKY BARRIER (Pan Jit International)
  • 1SS417TM - HIGH SPEED SWITCHING DIODE (Pan Jit International)
  • 1SS400 - SURFACE MOUNT FAST SWITCHING DIODE (LITE-ON)
  • 1SS400-G - Surface Mount High Speed Switching Diode (Comchip Technology)
  • 1SS400C2 - High Speed Switching diode (Cystech Electonics)
  • 1SS400CS - High Speed Switching Diode (JCET)

📌 All Tags

Schottky Barrier Diode Toshiba
Toshiba 1SS413CT-like datasheet