Datasheet Specifications
- Part number
- 1SS413CT
- Manufacturer
- Toshiba ↗
- File Size
- 172.64 KB
- Datasheet
- 1SS413CT-Toshiba.pdf
- Description
- Schottky Barrier Diode
Description
Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1.Applications * High-Speed Switching 2..
Features
* (1) Low forward voltage : VF(3) = 0.50 V (typ. ) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ. ) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris1SS413CT Distributors
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