1SS412 Datasheet - Toshiba

1SS412 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.0 V (typ.) : IR = 0.1 nA (typ.) : CT = 3.0 pF (typ.) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissi.

1SS412-Toshiba.pdf