Datasheet4U Logo Datasheet4U.com

1SS412 - Silicon Diode

1SS412 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse curre.

1SS412 Applications

* 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.0 V (typ. ) : IR = 0.1 nA (typ. ) : CT = 3.0 pF (typ. ) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reve

📥 Download Datasheet

Preview of 1SS412 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 1SS41 - Switching Diode (Rohm)
  • 1SS413 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE (SEMTECH)
  • 1SS417FN2 - SURFACE MOUNT SCHOTTKY BARRIER (Pan Jit International)
  • 1SS417TM - HIGH SPEED SWITCHING DIODE (Pan Jit International)
  • 1SS400 - SURFACE MOUNT FAST SWITCHING DIODE (LITE-ON)
  • 1SS400-G - Surface Mount High Speed Switching Diode (Comchip Technology)
  • 1SS400C2 - High Speed Switching diode (Cystech Electonics)
  • 1SS400CS - High Speed Switching Diode (JCET)

📌 All Tags

Silicon Diode Toshiba
Toshiba 1SS412-like datasheet