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1SS416CT Silicon Epitaxial Schottky Barrier Type Diode

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Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (t.

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Datasheet Specifications

Part number
1SS416CT
Manufacturer
Toshiba ↗
File Size
195.99 KB
Datasheet
1SS416CT-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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