1SS416CT Datasheet - Toshiba

1SS416CT Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT High Speed Switching Application z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA 0.6±0.05 1SS416CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P .

1SS416CT-Toshiba.pdf