TOSHIBA Diode Silicon Epitaxial Schottky Barrier T.
Toshiba
1SS420CT - Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.6±0.05 1S.
Toshiba
1SS420 - Silicon Epitaxial Schottky Barrier Type Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm.