1SS420 Datasheet | Specifications & PDF Download

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.6±0.05 1S

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