1SS420 Datasheet (Toshiba) - Silicon Epitaxial Schottky Barrier Type Diode

1SS420, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA Surge current (10 ms) IFSM 1 A Power dissipation P 150 mW Junction temperature Tj 125 °C St