Datasheet Specifications
- Part number
- 1SS420
- Manufacturer
- Toshiba ↗
- File Size
- 169.16 KB
- Datasheet
- 1SS420-Toshiba.pdf
- Description
- Silicon Epitaxial Schottky Barrier Type Diode
Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications * Low reverse current: IR = 5 μA (max) 1SS420 .
Applications
* Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA Sur1SS420 Distributors
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