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1SS420 Silicon Epitaxial Schottky Barrier Type Diode

1SS420 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications * Low reverse current: IR = 5 μA (max) 1SS420 .

1SS420 Applications

* Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA Sur

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Datasheet Details

Part number
1SS420
Manufacturer
Toshiba ↗
File Size
169.16 KB
Datasheet
1SS420-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba 1SS420-like datasheet