1SS424 Datasheet - Toshiba

1SS424 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS424 High-Speed Switching Applications z Low forward voltage : VF (3) = 0.50 V (typ.) 1SS424 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 30 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P 200 mA 1A 150 mW Junction temperature Tj 125 °C Storage temperatur.

1SS424 Datasheet (136.84 KB)