Datasheet4U Logo Datasheet4U.com

1SS426 Datasheet - Toshiba

1SS426 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS426 Ultra-High Speed Switching Applications z Compact 2-pin package: Ideal for high-density mounting z Low forward voltage : VF (3) = 0.98 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.) 1SS426 Unit: mm CATHODE MARK Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward.

1SS426 Datasheet (220.23 KB)

Preview of 1SS426 PDF
1SS426 Datasheet Preview Page 2 1SS426 Datasheet Preview Page 3

Datasheet Details

Part number:

1SS426

Manufacturer:

Toshiba ↗

File Size:

220.23 KB

Description:

Silicon diode.

📁 Related Datasheet

1SS420 Silicon Epitaxial Schottky Barrier Type Diode (Toshiba)

1SS420CT Silicon Diode (Toshiba)

1SS421 Silicon Epitaxial Schottky Barrier Type Diode (Toshiba)

1SS422 High speed Switching Diode (GME)

1SS422 SURFACE MOUNT FAST SWITCHING DIODE (WON-TOP)

1SS422 Silicon Epitaxial Schottky Barrier Type Diode (Toshiba)

1SS422 High Speed Switching Diode (TRANSYS)

1SS422 High Speed Switching Diodes (LGE)

TAGS

1SS426 Silicon Diode Toshiba

1SS426 Distributor