1SS421 Datasheet (Toshiba) - Silicon Epitaxial Schottky Barrier Type Diode

1SS421, Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Unit: mm Low forward voltage: VF (3) = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P 30 V 300 mA 200 mA 1 A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg 55 to 125 °C