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1SS421 Silicon Epitaxial Schottky Barrier Type Diode

1SS421 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Unit: mm Low forward voltage: VF (3) = 0.50V .

1SS421 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Datasheet Details

Part number
1SS421
Manufacturer
Toshiba ↗
File Size
163.76 KB
Datasheet
1SS421-Toshiba.pdf
Description
Silicon Epitaxial Schottky Barrier Type Diode

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba
Toshiba 1SS421-like datasheet