1SS423 Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications * Small package * Low forward voltage: VF.

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Datasheet Specifications

Part number: 1SS423
Manufacturer: Toshiba ↗
File Size: 334.53 KB
Datasheet: 1SS423-Toshiba.pdf
Description: Silicon Epitaxial Schottky Barrier Type Diode

Applications

* Small package
* Low forward voltage: VF (3) = 0.56 V (typ. )
* Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Av

1SS423 Distributors

📁 Related Datasheet

1SS422 1SS400 1SS400-G 1SS400C2 1SS400CS 1SS400CST5

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1SS423 Silicon Epitaxial Schottky Barrier Type Diode Toshiba

Toshiba 1SS423-like datasheet