TOSHIBA Variable Capacitance Diode Silicon Epitaxi.
Toshiba Semiconductor
1SV279 - Variable Capacitance Diode
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio • High capacitance ratio: C2V / C10V = 2.5 .