1SV279
Toshiba ↗ Semiconductor
164.58 KB
Variable capacitance diode.
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV279
1SV279
VCO for V/UHF Band Radio
* High capacitance ratio: C2V / C10.
📁 Related Datasheet
1SV270 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV270
1SV270
VCO for UHF Band Radio
• High capacitance ratio: C1 V/C4 V = 2.0 (ty.
1SV271 - Silicon Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV271
1SV271
VHF to UHF Band RF Attenuator Applications
• Useful for small size tuner • Small total capac.
1SV272 - PIN Diode
(Sanyo Semicon Device)
Ordering number :EN4924
1SV272
Silicon Epitaxial Type
Transmitting, Receiving Antenna-switch Use PIN Diode
Features
· Series connection of 2 element.
1SV276 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV276
VCO for UHF Band Radio
· High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low.
1SV277 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV277
1SV277
VCO for UHF Band Radio
• High capacitance ratio: C1 V/C4 V = 2.3 (ty.
1SV278 - VARIABLE CAPACITANCD DIODE
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV278
TV Tuning
· High capacitance ratio: C2 V/C25 V = 6.5 (typ.) · Low series resi.
1SV214 - BARIABLE CAPACITANCE DIODE
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV214
TV Tuning
· High capacitance ratio: C2 V/C25 V = 6.5 (typ.) · Low series resi.
1SV215 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV215
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 10.5 (typ.) · Low series r.
