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1SV279 Variable Capacitance Diode

1SV279 Description

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio * High capacitance ratio: C2V / C10.

1SV279 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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Toshiba Semiconductor 1SV279-like datasheet