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1SV279 Datasheet - Toshiba Semiconductor

1SV279_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV279

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

164.58 KB

Description:

Variable capacitance diode.

1SV279, Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio High capacitance ratio: C2V / C10V = 2.5 (typ.) Low series resistance: rs = 0.2 Ω (typ.) Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg 55 to 125 °C Note: Using continuously under heavy loads (e.g.

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