1SV276 Datasheet - Toshiba Semiconductor

1SV276 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.0 (typ.) Low series resistance: rs = 0.22 Ω (typ.) Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV276 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance .

1SV276_ToshibaSemiconductor.pdf