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1SV276 Datasheet - Toshiba Semiconductor

1SV276_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV276

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

114.69 KB

Description:

Variable capacitance diode.

1SV276, Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.0 (typ.) Low series resistance: rs = 0.22 Ω (typ.) Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV276 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance

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