Toshiba Semiconductor
1SV313 - Diode
TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE
1SV313
VCO FOR UHF BAND RADIO
l High Capacitance Ratio : C0.5V/C2.5V = 2.5 (Typ.) l Low Series Resistance
(9 views)
TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313.
Toshiba Semiconductor
1SV313 Distributor
