Toshiba Semiconductor manufacturer logo Part number: 1SV313 Manufacturer: Toshiba ↗ Semiconductor File Size: 85.65kb Download: 📄 Datasheet Description: Diode.
1SV310 Datasheet PDF Toshiba Semiconductor TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 1SV310 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.1 (typ.) • Low series resi.
1SV311 Datasheet PDF Toshiba Semiconductor TOSHIBA Diode Silicon Epitaxial Planar Type 1SV311 1SV311 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.1 (typ.) • Low series resi.
1SV312 Datasheet PDF Toshiba Semiconductor TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications · Two independent diodes mounted onto a 4-pin ultra pact p.
1SV314 Datasheet PDF Toshiba Semiconductor TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) z Low Serie.
1SV315 Datasheet PDF Sanyo Semicon Device Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Features · Ultrasmall-sized package facilitates high-de.
1SV316 Datasheet PDF Sanyo Semicon Device Ordering number:ENN6262 Silicon Epitaxial Pin Diode 1SV316 Variabe resistance Attenuator Use Features · Ultrasmall-sized package facilitates high-de.
1SV302 Datasheet PDF Toshiba Semiconductor TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV302 CATV Tuning · High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series r.
1SV303 Datasheet PDF Toshiba Semiconductor TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV303 CATV Tuning · High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series r.
