1SV312 Diode

Toshiba Semiconductor

Description

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications * Two independent diodes mounted onto a 4-pin ultra compa.

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Datasheet Specifications

Part number: 1SV312
Manufacturer: Toshiba ↗ Semiconductor
File Size: 72.70 KB
Datasheet: 1SV312_ToshibaSemiconductor.pdf
Description: Diode

Applications

* Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.
* Low capacitance: CT = 0.25 pF (typ. )
* Low series resistance: rs = 3 Ω (typ. ) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction

1SV312 Distributors

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1SV312 Diode Toshiba Semiconductor

Toshiba Semiconductor 1SV312-like datasheet