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1SV312 Datasheet - Toshiba Semiconductor

1SV312_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV312

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

72.70 KB

Description:

Diode.

1SV312, Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design.

Low capacitance: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV312 U

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Toshiba Semiconductor 1SV312-like datasheet