1SV312 Datasheet - Toshiba Semiconductor

1SV312 Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. Low capacitance: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV312 U.

1SV312 Datasheet (72.70 KB)